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Design of field-plate terminated 4H-SiC Schottky diodes using high-k dielectrics

โœ Scribed by A. Kumta; Rusli; Chin-Che Tin; J. Ahn

Book ID
104057891
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
256 KB
Volume
46
Category
Article
ISSN
0026-2714

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Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination
โœ K. Remashan; Wen-Pin Huang; Jen-Inn Chyi ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 303 KB

In this paper, we report the breakdown voltage (BV) of AlGaN/GaN based Schottky diodes with field plate edge termination. Simulation and fabrication of AlGaN/GaN Schottky diodes were carried out. The simulations were performed using the commercial 2-D device simulator DESSIS. From the simulations, i