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High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

โœ Scribed by Saxena, V.; Jian Nong Su; Steckl, A.J.


Book ID
114537572
Publisher
IEEE
Year
1999
Tongue
English
Weight
353 KB
Volume
46
Category
Article
ISSN
0018-9383

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In this paper, we report the breakdown voltage (BV) of AlGaN/GaN based Schottky diodes with field plate edge termination. Simulation and fabrication of AlGaN/GaN Schottky diodes were carried out. The simulations were performed using the commercial 2-D device simulator DESSIS. From the simulations, i