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Design Optimization for Digital Circuits Built With Gate-All-Around Silicon Nanowire Transistors

โœ Scribed by Yuchao Liu; Ru Huang; Runsheng Wang; Jing Zhuge; Qiumin Xu; Yangyuan Wang


Book ID
111672094
Publisher
IEEE
Year
2012
Tongue
English
Weight
959 KB
Volume
59
Category
Article
ISSN
0018-9383

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Silicon nanowires with lateral uniaxial
โœ M. Najmzadeh; L. De Michielis; D. Bouvet; P. Dobrosz; S. Olsen; A.M. Ionescu ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 486 KB

In this work we present for the first time correlation of lateral uniaxial tensile strain and I-V characteristics of GAA Si NW n-MOSFET, all measured on the same device. Micro-Raman spectroscopy is employed for direct strain measurement on devices to exploit the main sources of process-induced strai