๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Design of flat-band AlGaAs heterojunction Bragg reflectors

โœ Scribed by Yechuri, S.S.; Tsay-Jiu Brian Shieh; Johnson, R.H.


Book ID
114536346
Publisher
IEEE
Year
1996
Tongue
English
Weight
640 KB
Volume
43
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Optimization of Bragg reflectors in AlGa
โœ V. M. N. Passaro; F. Magno; F. De Leonardis ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 202 KB

In this paper a detailed investigation of the distributed Bragg reflectors in GaAs-based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and Al~x~Ga~1-x~As alloy composition on output emission power and threshold cu

Narrow-band Bragg reflectors in optical
โœ Kawasaki, B. S.; Hill, K. O.; Johnson, D. C.; Fujii, Y. ๐Ÿ“‚ Article ๐Ÿ“… 1978 ๐Ÿ› Optical Society of America ๐ŸŒ English โš– 315 KB
Growth and characterization of AlGaAs/Ga
โœ F. Scheffer; M. Joseph; W. Prost; F.J. Tegude; H. Lakner; S. Zumkley; G. Wingen; ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 374 KB

Using a low-pressure metal-organic vapour phase epitaxy reactor, Bragg reflector structures were grown consisting of an AIGaAs/GaAs multilayer stack with up to 20 periods on top of a GaAs substrate. Each layer exhibited a constant optical length of a quarter of the desired wavelength. The numerical