Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs
β Scribed by V. M. N. Passaro; F. Magno; F. De Leonardis
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 202 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1612-2011
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β¦ Synopsis
In this paper a detailed investigation of the
distributed Bragg reflectors in GaAs-based vertical cavity surface
emitting lasers is presented. The influence of layer doping
concentration, number of periods, oxide aperture and
Al~x~Ga~1-x~As alloy composition on output emission power
and threshold current has been found. Both oxidized and non
oxidized structures have been considered. A number of
interpolation curves are extracted and presented for design and
fabrication purposes. Although the results are presented for
GaAs-based structures, the theoretical approach is very general.
π SIMILAR VOLUMES
Using a low-pressure metal-organic vapour phase epitaxy reactor, Bragg reflector structures were grown consisting of an AIGaAs/GaAs multilayer stack with up to 20 periods on top of a GaAs substrate. Each layer exhibited a constant optical length of a quarter of the desired wavelength. The numerical
A distributed Bragg reflector (DBR) utilizing the digital alloy Al 0.9 Ga 0.1 As was grown by using the molecular beam epitaxy (MBE) method for application in 1.3 Β΅m optical communications and compared to the analog-alloy AlGaAs/GaAs DBR. The transmission electron microscopic (TEM) image showed a hi