๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors

โœ Scribed by R.Y. Li; Z.G. Wang; B. Xu; P. Jin; X. Guo; M. Chen


Publisher
Springer
Year
2006
Tongue
English
Weight
533 KB
Volume
86
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Optimization of Bragg reflectors in AlGa
โœ V. M. N. Passaro; F. Magno; F. De Leonardis ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 202 KB

In this paper a detailed investigation of the distributed Bragg reflectors in GaAs-based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and Al~x~Ga~1-x~As alloy composition on output emission power and threshold cu

A digital-alloy AlGaAs/GaAs distributed
โœ N.K. Cho; K.W. Kim; J.D. Song; W.J. Choi; J.I. Lee ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 634 KB

A distributed Bragg reflector (DBR) utilizing the digital alloy Al 0.9 Ga 0.1 As was grown by using the molecular beam epitaxy (MBE) method for application in 1.3 ยตm optical communications and compared to the analog-alloy AlGaAs/GaAs DBR. The transmission electron microscopic (TEM) image showed a hi

Growth and characterization of AlGaAs/Ga
โœ F. Scheffer; M. Joseph; W. Prost; F.J. Tegude; H. Lakner; S. Zumkley; G. Wingen; ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 374 KB

Using a low-pressure metal-organic vapour phase epitaxy reactor, Bragg reflector structures were grown consisting of an AIGaAs/GaAs multilayer stack with up to 20 periods on top of a GaAs substrate. Each layer exhibited a constant optical length of a quarter of the desired wavelength. The numerical