## Abstract A very simplified model of atomicβscale etch pitting during sputtering erosion for composition depth profiling is used to modify the BenninghovenβHofmann approach to layerβbyβlayer sputtering. It is shown that analytically tractable defining equations result, with solutions that indicat
β¦ LIBER β¦
Depth resolution in sputter profiling
β Scribed by S. Hofmann
- Publisher
- Springer
- Year
- 1977
- Tongue
- English
- Weight
- 174 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1432-0630
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The effect of atomic-scale etch pit form
β
G. Carter; M. J. Nobes; I. V. Katardjiev
π
Article
π
1990
π
John Wiley and Sons
π
English
β 396 KB
Ultimate depth resolution and profile re
β
Siegfried Hofmann
π
Article
π
2000
π
John Wiley and Sons
π
English
β 200 KB
The statistical sputtering contribution
β
M.P. Seah; J.M. Sanz; S. Hofmann
π
Article
π
1981
π
Elsevier Science
π
English
β 431 KB
Influence of the individual layer thickn
β
D. Marton
π
Article
π
1987
π
Elsevier Science
π
English
β 243 KB
Improved depth resolution in Auger depth
β
W. Pamler; E. Wildenauer; A. Mitwalsky
π
Article
π
1990
π
John Wiley and Sons
π
English
β 662 KB
## Abstract The depth resolution in Auger inβdepth profiles of TiN thin films on smooth Si substrates is determined by the evolution of a sputterβinduced surface roughness. It is shown that this effect depends critically on the ion angle of incidence. Therefore, the depth resolution can be improved
Roughness contributions to resolution in
β
M.P. Seah; M.E. Jones
π
Article
π
1984
π
Elsevier Science
π
English
β 792 KB