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Deposition of silicon oxynitride at room temperature by Inductively Coupled Plasma-CVD

✍ Scribed by Luís da Silva Zambom; Patrick Verdonck

Book ID
108289287
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
122 KB
Volume
515
Category
Article
ISSN
0040-6090

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✍ J. Shieh; T.S. Ko; H.L. Chen; B.T. Dai; T.C. Chu 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 430 KB 👁 1 views

## Abstract We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductively‐coupled plasma CVD at 400 °C. Gold nanoparticles, attached to silicon oxide through a self‐assembled monolayer, were adopted as cataly