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Deposition of indium tin oxide by atmospheric pressure chemical vapour deposition

✍ Scribed by Jeffrey M. Gaskell; David W. Sheel

Book ID
113937015
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
656 KB
Volume
520
Category
Article
ISSN
0040-6090

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Atmospheric pressure chemical vapour dep
Atmospheric pressure chemical vapour deposition of fluorine-doped tin(IV) oxide from fluoroalkyltin precursors
✍ Joanne E. Stanley; Anthony C. Swain; Kieran C. Molloy; David W. H. Rankin; Heath πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 251 KB πŸ‘ 1 views

13 , n = 1) have been synthesized, characterized by 1 H, 13 C, 19 F and 119 Sn NMR, and evaluated as precursors for the atmospheric pressure chemical vapour deposition of fluorine-doped SnO 2 thin films. All precursors were sufficiently volatile in the range 84-136 β€’ C and glass substrate temperatur