Deposition of electroceramic thin films by MOCVD

✍ Scribed by J. Lindner; M. Schumacher; M. Dauelsberg; F. Schienle; S. Miedl; D. Burgess; E. Merz; G. Strauch; H. Juergensen

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 282 KB
• Volume: 10
• Category: Article
• ISSN: 1616-301X
• DOI: 10.1002/1099-0712(200005/10)10:3/5<163::aid-amo405>3.0.co;2-a

✦ Synopsis

MOCVD (metal±organic chemical vapor deposition) of new materials, such as perovskite-type ceramic thin ®lms, will be a major key technology in the ®eld of ULSI non-volatile and volatile memory applications. This article outlines the latest trends in the ®eld of MOCVD equipment and process development, in particular in the ®eld of high k-dielectric and ferroelectrics. Using liquid precursor delivery systems reproducible evaporation can be achieved. Furthermore, perfect temperature control, as well as a precise gas and vapor ¯ow control through the gas inlet to the substrate, ensure high quality BST, PZT and SBT thin ®lms, bearing superior electrical and microstructural properties and near 100% step coverage at low process temperatures. Copyright =