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Depletion of the inverse electron channel at the type-II heterojunction in the systemp-GaInAsSb/p-InAs

โœ Scribed by T. I. Voronina; T. S. Lagunova; M. P. Mikhailova; K. D. Moiseev; A. E. Rosov; Yu. P. Yakovlev

Book ID
110119725
Publisher
Springer
Year
1998
Tongue
English
Weight
106 KB
Volume
32
Category
Article
ISSN
1063-7826

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Electron channel with high carrier mobil
Electron channel with high carrier mobility at the interface of type-II broken-gapp-GaInAsSb/p-InAs single heterojunctions
โœ M.P. Mikhailova; T.I. Voronina; T.S. Lagunova; K.D. Moiseev; S.A. Obukhov; A.E. ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 81 KB

We have studied experimentally the magneto-transport properties of type-II broken-gap Ga 1-x In x AsSb/ p-InAs heterostructures with various doping levels of the quaternary layer by Te or Zn. A strong electron channel with high electron mobility was observed at the interface of the heterostructures.