𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution

✍ Scribed by T. I. Voronina; T. S. Lagunova; M. P. Mikhailova; K. D. Moiseev; M. A. Sipovskaya; Yu. P. Yakovlev


Book ID
110119655
Publisher
Springer
Year
1997
Tongue
English
Weight
85 KB
Volume
31
Category
Article
ISSN
1063-7826

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Electron channel with high carrier mobil
✍ M.P. Mikhailova; T.I. Voronina; T.S. Lagunova; K.D. Moiseev; S.A. Obukhov; A.E. πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 81 KB

We have studied experimentally the magneto-transport properties of type-II broken-gap Ga 1-x In x AsSb/ p-InAs heterostructures with various doping levels of the quaternary layer by Te or Zn. A strong electron channel with high electron mobility was observed at the interface of the heterostructures.