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Dependency of oxygen partial pressure on the characteristics of ZnO films grown by radio frequency magnetron sputtering

โœ Scribed by C. H. Ahn; Y. Y. Kim; S. W. Kang; B. H. Kong; S. K. Mohanta; H. K. Cho; J. H. Kim; H. S. Lee


Publisher
Springer US
Year
2007
Tongue
English
Weight
362 KB
Volume
19
Category
Article
ISSN
0957-4522

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Effects of oxygen partial pressure on re
โœ Zhenguo Ji; Qinan Mao; Weiqing Ke ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 929 KB

Cu/ZnO/n + -Si structures were prepared by magnetron sputtering of a layer of ZnO thin film onto heavily doped silicon substrate, followed by thermal evaporation of a thin layer of metallic Cu. The resistive switching characteristics of Cu/ZnO/n + -Si structures were investigated as a function of ox