๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Dependence of the lateral distribution of implanted ions on tilt angle

โœ Scribed by Runge, H. ;Oppolzer, H. ;Mader, H.


Book ID
105375701
Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
119 KB
Volume
67
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Implantation angle dependence of ion irr
โœ J Nord; K Nordlund; B Pipeleers; A Vantomme ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 58 KB

We use molecular dynamics (MD) simulations to study the effect of the implantation angle on the damage produced during ion beam irradiation of GaN. We bombard 5 keV Er ions at perfect wurtzite GaN with incident angles of 0 โ€ข -22 โ€ข angle against the [0 0 0 1] crystal axis. The simulations reproduce t