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Dependence of deposition characteristics by copper chemical vapor deposition on gas flow shape

โœ Scribed by Akiko Kobayashi; Atsushi Sekiguchi; Kei Ikeda; Osamu Okada; Tomoaki Koide

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
531 KB
Volume
83
Category
Article
ISSN
8756-663X

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โœฆ Synopsis

When copper interconnection is applied in practical ULSI devices, it is required to fill holes and trenches with high aspect ratios with copper. A high deposition rate of 100 nm/min as well as complete gap filling at an aspect ratio of 3 was obtained in deposition of copper by chemical vapor deposition. We evaluated three types of CVD chamber configuration. In this work, the deposition rate and the filling property were found to be regulated by the gas velocity very near the substrate surface. High-speed gas flow over the substrate surface can be realized with a suitable chamber configuration, which results in high deposition rate, good uniformity, and a high consumption rate of the source.

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Fine copper lines, with a width of less than 1 mm, were fabricated on silicon substrates. For the fabrication, oxidized (100) silicon substrates were used, covered with a film grown by LPCVD at 0.1 Torr and 5508C from W(CO) decomposition. 6 These substrates were subsequently covered with AZ 5214E ph