Dependence of deposition characteristics
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Akiko Kobayashi; Atsushi Sekiguchi; Kei Ikeda; Osamu Okada; Tomoaki Koide
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Article
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2000
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John Wiley and Sons
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English
โ 531 KB
When copper interconnection is applied in practical ULSI devices, it is required to fill holes and trenches with high aspect ratios with copper. A high deposition rate of 100 nm/min as well as complete gap filling at an aspect ratio of 3 was obtained in deposition of copper by chemical vapor deposit