Structural changes in the indium oxide lattice due to doping with Sn 4Ψ (ITO) were studied by MoΒ¨ssbauer spectroscopy, EXAFS, and neutron powder diffraction. There is a decrease in electrical conductivity as the tin content and oxygen partial pressure increase, which is related to a distortion in th
Density-Functional Study of the Electronic Structure and Optical Properties of Transparent Conducting Oxides In4Sn3O12and In4Ge3O12
β Scribed by Yun Geng Zhang; Yuan Xu Wang
- Publisher
- Springer US
- Year
- 2011
- Tongue
- English
- Weight
- 648 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0361-5235
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Me-substituted In 4 Sn 3 O 12 , Me β«Ψβ¬ Y and Ti, have been prepared by high-temperature solid state reaction and subsequent quenching. The structure of these compounds was analyzed using the Rietveld method. Y substitution causes an enlargement of the lattice constant whereas Ti substitution diminis
The electronic properties of In203 (IO) and Sn-doped In203 (ITO) ceramics doped with Ti 4Γ·, Zr 4Γ· or Ge 4Γ· are investigated. The choice of the doping elements arises from their high value of the "Lewis acid strength". Related to that, it has been shown that the doping of IO or ITO ceramics with Zr 4
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