✦ LIBER ✦
The electronic effect of Ti4+, Zr4+ and Ge4+ dopings upon the physical properties of In2O3 and Sn-doped In2O3 ceramics: application to new highly-transparent conductive electrodes
✍ Scribed by G. Campet; S.D. Han; S.J. Wen; J.P. Manaud; J. Portier; Y. Xu; J. Salardenne
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 420 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
The electronic properties of In203 (IO) and Sn-doped In203 (ITO) ceramics doped with Ti 4÷, Zr 4÷ or Ge 4÷ are investigated. The choice of the doping elements arises from their high value of the "Lewis acid strength". Related to that, it has been shown that the doping of IO or ITO ceramics with Zr 4÷, and most interestingly with Ti 4÷ or Ge 4÷, increases both the carrier concentration and the mobility. This approach has been successfully applied to thin films, and new highlytransparent conductive electrodes have been realized.