The electronic structure and transport properties of In 24 M 8 O 48 (M = Ge 4+ , Sn 4+ , Ti 4+ , and Zr 4+ ) have been studied by using the full-potential linearized augmented plane-wave method and the semiclassical Boltzmann theory, respectively. It is found that the magnitude of powerfactor with r
Structure and Thermoelectric Properties of Me-Substituted In4Sn3O12, Me=Y and Ti
β Scribed by W. Pitschke; J. Werner; G. Behr; K. Koumoto
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 261 KB
- Volume
- 153
- Category
- Article
- ISSN
- 0022-4596
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β¦ Synopsis
Me-substituted In 4 Sn 3 O 12 , Me β«Ψβ¬ Y and Ti, have been prepared by high-temperature solid state reaction and subsequent quenching. The structure of these compounds was analyzed using the Rietveld method. Y substitution causes an enlargement of the lattice constant whereas Ti substitution diminishes the size of the unit cell. The thermoelectric transport properties of Me-substituted In 4 Sn 3 O 12Ψ were investigated over a temperature range of 300 to 1273 K. The electrical conductivity, , decreases with increasing substitution level, whereas the absolute value of the Seebeck coef5cient, S, increases. Highly Ti-substituted compounds at high temperatures exhibited maximum values of the power factor S 2 for thermoelectric power generation of 1.9 10 Ψ4 W K Ψ2 m Ψ1 during annealing under an argon atmosphere containing less than 10 ppm oxygen. Relatively low thermal conductivities of the sintered pellets of the compounds, ca. 1.3 W m Ψ1 K Ψ1 at 1273 K, lead to the largest value of the thermoelectric 5gure of merit Z β«Ψβ¬ S 2 / β«Ψβ¬ 1.5 10 Ψ4 K Ψ1 as the maximum value at 1273 K.
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