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Structural Studies of Tin-Doped Indium Oxide (ITO) and In4Sn3O12

✍ Scribed by N Nadaud; N Lequeux; M Nanot; J Jové; T Roisnel

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
485 KB
Volume
135
Category
Article
ISSN
0022-4596

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✦ Synopsis

Structural changes in the indium oxide lattice due to doping with Sn 4؉ (ITO) were studied by Mo¨ssbauer spectroscopy, EXAFS, and neutron powder diffraction. There is a decrease in electrical conductivity as the tin content and oxygen partial pressure increase, which is related to a distortion in the first Sn-O shell. Doping with tin increases the oxygen /cation ratio and the lattice parameter and decreases the Sn-O distances, which disorders the host network. The low-conduction In 4 Sn 3 O 12 phase precipitates when the tin content exceeds 6 at.%. In 4 Sn 3 O 12 is rhombohedral (space group R3 , a ‫؍‬ 9.4604(2) A s , and c ‫؍‬ 8.8584(2) A s in a hexagonal basis). There is a cation ordering with octahedral sites fully occupied by tin, the tin sites being equivalent in both highly doped ITO and In 4 Sn 3 O 12 .

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