✦ LIBER ✦

Densely packed Ge quantum dots grown on SiO2/Si substrate

✍ Scribed by L. Zhang; H. Ye; Y.R. Huangfu; C. Zhang; X. Liu

Book ID: 104001605
Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 457 KB
Volume: 256
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2009.08.057

No coin nor oath required. For personal study only.

✦ Synopsis

We studied the growing process of Ge dots on silicon substrates covered with an ultrathin silicon dioxide buffer layer which was formed with simple chemical procedure. Uniform and densely packed (10 11 cm À2 ) quantum dots (QDs) were obtained by optimizing the growth parameter with the MBE method. The influence of temperature, coverage, as well as the post-annealing process, on the epitaxial and non-epitaxial nanodots formation was evaluated. Nano-sized high density quantum dots were also realized with different growing conditions, whose structural and growing mechanism were discussed under the help of SEM and RHEED results.

📜 SIMILAR VOLUMES

InAs/GaAs Quantum-Dot Lasers Monolithica

InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates

✍ Lee, A. D.; Qi Jiang, ; Mingchu Tang, ; Yunyan Zhang, ; Seeds, A. J.; Huiyun Liu 📂 Article 📅 2013 🏛 IEEE 🌐 English ⚖ 606 KB

Strain Seeding of Ge Quantum Dots Grown

Strain Seeding of Ge Quantum Dots Grown on Si (001)

✍ A. Dunbar; M. Halsall; P. Dawson; U. Bangert; Y. Shiraki; M. Miura 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 84 KB 👁 1 views

Formation and optical properties of Ge q

Formation and optical properties of Ge quantum dots selectively grown on patterned Si(001) substrates

✍ Nguyen, Lam H. ;Le Thanh, V. ;Yam, V. ;D�barre, D. ;Halbwax, M. ;Bouchier, D. 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 187 KB

Fabrication and carrier transport proper

Fabrication and carrier transport properties of Si quantum dots/SiO2 multilayer films on Si substrate

✍ Wang, Xinzhan; Yu, Wei; Feng, Huina; Yu, Xiang; Wang, Jin; Teng, Xiaoyun; Lu, Wa 📂 Article 📅 2014 🏛 Elsevier Science 🌐 English ⚖ 291 KB

Selective growth of InAs self-assembled

Selective growth of InAs self-assembled quantum dots on nanopatterned SiO2/Si substrate

✍ Choi, B. H.; Park, C. M.; Song, S.-H.; Son, M. H.; Hwang, S. W.; Ahn, D.; Kim, E 📂 Article 📅 2001 🏛 American Institute of Physics 🌐 English ⚖ 805 KB

Effects of growth parameters on the surf

Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate

✍ Y.Y. Liang; S.F. Yoon; C.Y. Ngo; H. Tanoto; K.P. Chen; W.K. Loke; E.A. Fitzgeral 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 816 KB

We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si 1 À x Ge x /Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si 1 À x Ge x /Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized