We report a comparative study on selective epitaxy of nanostructures with different geometrical shapes. GaAs pyramids were grown by molecular beam epitaxy into circular holes, L-shaped holes, and cross-shaped holes, patterned using nanoimprint lithography. These GaAs nanostructures were used for gui
Selective growth of InAs self-assembled quantum dots on nanopatterned SiO2/Si substrate
β Scribed by Choi, B. H.; Park, C. M.; Song, S.-H.; Son, M. H.; Hwang, S. W.; Ahn, D.; Kim, E. K.
- Book ID
- 118733879
- Publisher
- American Institute of Physics
- Year
- 2001
- Tongue
- English
- Weight
- 805 KB
- Volume
- 78
- Category
- Article
- ISSN
- 0003-6951
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π SIMILAR VOLUMES
A site-selective growth of self-organized InAs quantum dots (QDs) employing a combination of in-situ focused ion beam (FIB) implantation and self-organized molecular beam epitaxy (MBE) growth has been successfully demonstrated. First, a buffer layer of GaAs was grown by MBE before a square lattice o
In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also present
The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with Ga