✦ LIBER ✦

Formation and optical properties of Ge quantum dots selectively grown on patterned Si(001) substrates

✍ Scribed by Nguyen, Lam H. ;Le Thanh, V. ;Yam, V. ;D�barre, D. ;Halbwax, M. ;Bouchier, D.

Book ID: 105361937
Publisher: John Wiley and Sons
Year: 2004
Tongue: English
Weight: 187 KB
Volume: 201
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200303967

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Strain Seeding of Ge Quantum Dots Grown

Strain Seeding of Ge Quantum Dots Grown on Si (001)

✍ A. Dunbar; M. Halsall; P. Dawson; U. Bangert; Y. Shiraki; M. Miura 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 84 KB 👁 1 views

Optical Properties of InAs Quantum Dots

Optical Properties of InAs Quantum Dots Grown on InP (001) Substrate by MOCVD

✍ Benzhong Wang; Soo-Jin Chua 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 107 KB 👁 2 views

Interaction of self-assembled Ge islands

Interaction of self-assembled Ge islands and adjacent Si layers grown on unpatterned and patterned Si(001) substrates

✍ T. I. Kamins; D. P. Basile 📂 Article 📅 2000 🏛 Springer US 🌐 English ⚖ 712 KB

Structure and optical properties of mult

Structure and optical properties of multi-quantum wells grown on Si(111) substrates

✍ X.Q. Gu; L.P. Zhu; Z.Z. Ye; H.P. He; F. Liu; W. Jaeger; P.K. Chu; M.X. Qiu; Y.Z. 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 441 KB

Optical properties of maskless selective

Optical properties of maskless selectively grown GaAs and AlxGa1âxAs on V-grooved Si substrates

✍ Hashimoto, A.; Fukunaga, T.; Watanabe, N. 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 307 KB

Optical properties of Ge nanowires grown

Optical properties of Ge nanowires grown on Si(100) and (111) substrates: Nanowire-substrate heterointerfaces

✍ Kamenev, B. V. ;Sharma, V. ;Tsybeskov, L. ;Kamins, T. I. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 199 KB

## Abstract The cover picture of the present issue of physica status solidi (a) contains two scanning electron micrographs showing approximately 40 nm diameter Ge nanowires grown by the vapor–liquid–solid (VLS) technique on Si(100) (upper right figure) and Si(111) (lower left figure) substrates, re