InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates
โ Scribed by Lee, A. D.; Qi Jiang, ; Mingchu Tang, ; Yunyan Zhang, ; Seeds, A. J.; Huiyun Liu,
- Book ID
- 120487332
- Publisher
- IEEE
- Year
- 2013
- Tongue
- English
- Weight
- 606 KB
- Volume
- 19
- Category
- Article
- ISSN
- 1077-260X
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๐ SIMILAR VOLUMES
We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si 1 ร x Ge x /Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si 1 ร x Ge x /Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized
We studied the growing process of Ge dots on silicon substrates covered with an ultrathin silicon dioxide buffer layer which was formed with simple chemical procedure. Uniform and densely packed (10 11 cm ร2 ) quantum dots (QDs) were obtained by optimizing the growth parameter with the MBE method. T