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Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering

✍ Scribed by Palacios, T. ;Shen, L. ;Keller, S. ;Chakraborty, A. ;Heikman, S. ;Buttari, D. ;DenBaars, S. P. ;Mishra, U. K.

Book ID
105363216
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
89 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

A new kind of high electron mobility transistor (HEMT) based on a GaN‐spacer is reported. To confine the two‐dimensional electron gas in this AlGaN‐free HEMT, a GaN/ultrathin AlN/GaN pseudo‐hetero‐junction has been used. The effective conduction band discontinuity is given by the AlN polarization‐induced electric field. This new transistor shows a superior general performance than the standard HEMT due to a decrease in the alloy and real space transfer scattering, as well as lower ohmic contact resistance. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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## Abstract N‐face AlGaN (cap)/GaN (channel)/AlGaN (barrier)/GaN (buffer) high electron mobility transistors (HEMTs) provide a simple solution for strong confinement of the two‐dimensional electron gas (2DEG) from the back since carriers are induced on top of the AlGaN barrier. To reduce the advers