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Defects in silicon crystals after the high temperature treatment

✍ Scribed by Groza, A. A. ;Nikolaeva, L. G. ;Starchik, M. I. ;Shmatko, G. G. ;Zaslavskii, Yu. I.


Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
442 KB
Volume
70
Category
Article
ISSN
0031-8965

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The changes in dimensions and lattice parameters produced by irradiation in two reactors with very different dose rate have been studied over the temperature range 400-700Β°C. In this range it is found that the activation energy associated with the equivalent temperature concept is not constant. It i