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Defects in amorphous Si-N films prepared by RF sputtering

✍ Scribed by Tatsuo Shimizu; Shizuo Oozora; Akiharu Morimoto; Minoru Kumeda; Nobuhiko Ishii

Publisher: Elsevier Science
Year: 1982
Weight: 299 KB
Volume: 8
Category: Article
ISSN: 0165-1633
DOI: 10.1016/0165-1633(82)90074-0

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## Abstract Hydrogenated germanium‐carbon alloy (GeC:H) films have been deposited by a reactive rf magnetron sputtering of Ge in methane–argon gas mixtures. As the second sputtering gas, helium is utilized in order to control the film properties. The effect of helium partial pressure ratio __R__ to