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Defects at the Si/SiO2 interface: Their nature and behaviour in technological processes and stress

✍ Scribed by W. Füssel; M. Schmidt; H. Angermann; G. Mende; H. Flietner

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 501 KB
Volume: 377
Category: Article
ISSN: 0168-9002
DOI: 10.1016/0168-9002(96)00205-7

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