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Defect-related luminescence of Si/SiO 2 layers

✍ Scribed by Khomenkova, L; Korsunska, N; Torchynska, T; Yukhimchuk, V; Jumayev, B; Many, A; Goldstein, Y; Savir, E; Jedrzejewski, J

Book ID
118149279
Publisher
Institute of Physics
Year
2002
Tongue
English
Weight
97 KB
Volume
14
Category
Article
ISSN
0953-8984

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## Abstract Scanning electron microscopy (SEM) and cathodoluminescence (CL) in combination with scanning transmission electron microscopy (STEM) have been used to investigate thermally grown amorphous silicon dioxide layers implanted isoelectronically with group IV ions (C^+^, Si^+^, Ge^+^, Sn^+^,