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Defect production in silicon irradiated with 5.68 GeV Xe ions

✍ Scribed by V.S. Varichenko; A.M. Zaitsev; N.M. Kazutchits; A.R. Chelyadinskii; N.M. Penina; V.A. Martinovich; Ya.I. Latushko; W.R. Fahrner

No coin nor oath required. For personal study only.

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