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Defect production and annealing due to high-energy ion implantation: I. Silicon

✍ Scribed by T.A. Belykh; A.L. Gorodishchensky; L.A. Kazak; V.E. Semyannikov; A.R. Urmanov

Book ID
113280925
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
475 KB
Volume
51
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES

Defect production and annealing in ion i
Defect production and annealing in ion implanted silicon carbide
✍ A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 375 KB

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron