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Defect level signatures in CuInSe2 by photocurrent and capacitance spectroscopy

✍ Scribed by Krysztopa, A.; Igalson, M.; Gütay, L.; Larsen, J.K.; Aida, Y.

Book ID
122723013
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
374 KB
Volume
535
Category
Article
ISSN
0040-6090

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This paper reports on the first successful measurements of deep levels in CuInSe2 by deep level transient spectroscopy (DLTS) on 9% efficient CdS/CuInSe2 solar cells. The results indicate the presence in the p-type CuInSe2 films with a carrier concentration of 1 X 10 is cm -3 of a hole trap of conce