✦ LIBER ✦

Defect evaluation and electrical characteristics of GaSb and In0.17Ga0.83Sb films grown by molecular beam epitaxy

✍ Scribed by Kodama, M.

Book ID: 105383961
Publisher: John Wiley and Sons
Year: 1994
Tongue: English
Weight: 614 KB
Volume: 141
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2211410114

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical characteristics and energy ba

Electrical characteristics and energy band offsets in n GaSb-p Ga0.83Al0.17Sb

✍ Mebarki, M. 📂 Article 📅 1991 🏛 American Institute of Physics 🌐 English ⚖ 494 KB

Redistribution of beryllium in InP and G

Redistribution of beryllium in InP and Ga0.47In0.53as grown by hydride source molecular beam epitaxy and metalorganic molecular beam epitaxy

✍ M.B. Panish; R.A. Hamm; D. Ritter; H.S. Luftman; C.M. Cotell 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 869 KB

Piezoreflectance and photoreflectance st

Piezoreflectance and photoreflectance study of annealing effects on GaAs0.916Sb0.084and GaAs0.906Sb0.075N0.019films on GaAs grown by gas-source molecular beam epitaxy

✍ Hsu, H. P. ;Huang, Y. N. ;Huang, Y. S. ;Lin, Y. T. ;Ma, T. C. ;Lin, H. H. ;Tiong 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 448 KB

## Abstract Thermal annealing effects of GaAs~0.916~Sb~0.084~ and GaAs~0.906~Sb~0.075~N~0.019~ films grown on GaAs substrates by gas‐source molecular beam epitaxy have been characterized by piezoreflectance (PzR) and photoreflectance (PR). By a comparison of relative intensity of PzR and PR spectra

Electrical characteristics and energy-ba

Electrical characteristics and energy-band offsets in n-InAs0.89Sb0.11/n-GaSb heterojunctions grown by the liquid phase epitaxy technique

✍ M. Mebarki; A. Kadri; H. Mani 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 293 KB

Morphology and shape dependent character

Morphology and shape dependent characteristics of InAs/InP(1 0 0) quantum dot laser grown by gas source molecular beam epitaxy

✍ S.G. Li; Q. Gong; C.F. Cao; X.Z. Wang; L. Yue; J.Y. Yan; H.L. Wang 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 677 KB

Fabrication and characteristics of In0.4

Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy

✍ S.F. Yoon; B.P. Gay; H.Q. Zheng; K.S. Ang; H. Wang; G.I. Ng 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 313 KB

In 0.48 Ga 0.52 P/In 0.20 Ga 0.80 As/GaAs pseudomorphic high electron mobility transistor (p-HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. The electron mobility and sheet carrier density at room temperature were 1700 cm 2 /Vs and 3