Piezoreflectance and photoreflectance study of annealing effects on GaAs0.916Sb0.084and GaAs0.906Sb0.075N0.019films on GaAs grown by gas-source molecular beam epitaxy

✍ Scribed by Hsu, H. P. ;Huang, Y. N. ;Huang, Y. S. ;Lin, Y. T. ;Ma, T. C. ;Lin, H. H. ;Tiong, K. K. ;Sitarek, P. ;Misiewicz, J.

• Book ID: 105365334
• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 448 KB
• Volume: 206
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200881409

✦ Synopsis

Abstract

Thermal annealing effects of GaAs~0.916~Sb~0.084~ and GaAs~0.906~Sb~0.075~N~0.019~ films grown on GaAs substrates by gas‐source molecular beam epitaxy have been characterized by piezoreflectance (PzR) and photoreflectance (PR). By a comparison of relative intensity of PzR and PR spectra, the identification of conduction to heavy‐hole (HH) band and conduction to light‐hole (LH) band transitions originated from the strained induced valence band splitting have been achieved. The near band edge transition energies are blue‐shifted, and the splitting of HH and LH bands is reduced after thermal annealing treatment. The annealing effects of GaAs~0.906~Sb~0.075~N~0.019~ are found to be more pronounced than that of GaAs~0.916~Sb~0.084~. The temperature dependences of near band edge transition energies are analyzed using Varshni and Bose–Einstein expressions in the temperature range from 15 K to 300 K. The parameters that describe the temperature variations of the near band edge transition energies are evaluated and discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)