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Electrical characteristics and energy-band offsets in n-InAs0.89Sb0.11/n-GaSb heterojunctions grown by the liquid phase epitaxy technique

✍ Scribed by M. Mebarki; A. Kadri; H. Mani


Book ID
103385511
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
293 KB
Volume
72
Category
Article
ISSN
0038-1098

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