𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Defect engineering in Czochralski silicon by electron irradiation at different temperatures

✍ Scribed by J.L Lindström; L.I Murin; T Hallberg; V.P Markevich; B.G Svensson; M Kleverman; J Hermansson

Book ID
114165157
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
93 KB
Volume
186
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Oxygen precipitation in neutron-irradiat
Oxygen precipitation in neutron-irradiated Czochralski silicon annealed at elevated temperature
✍ Cui, Can ;Yang, Deren ;Ma, Xiangyang ;Fan, Ruixin ;Que, Duanlin 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 159 KB

## Abstract The effects of vacancies introduced by neutron‐irradiation on oxygen precipitation at elevated temperatures in Czochralski (CZ) silicon have been investigated. In comparison with noirradiated CZ silicon, the neutron‐irradiated CZ silicon exhibits stronger oxygen precipitation at 1050 °C