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Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures

โœ Scribed by V. V. Emtsev; P. Ehrhart; D. S. Poloskin; K. V. Emtsev


Book ID
106397579
Publisher
Springer US
Year
2007
Tongue
English
Weight
163 KB
Volume
18
Category
Article
ISSN
0957-4522

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