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Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure Chemical Vapor Deposition

✍ Scribed by Jayesh Bharathan, Jagdish Narayan, George Rozgonyi…

Book ID
120925711
Publisher
Springer US
Year
2013
Tongue
English
Weight
654 KB
Volume
42
Category
Article
ISSN
0361-5235

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✍ Youngcheon Jeong; Masao Sakuraba; Junichi Murota 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 304 KB

Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at t