𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells

✍ Scribed by Shatalov, M.; Zhang, J.; Chitnis, A.S.; Adivarahan, V.; Yang, J.; Simin, G.; Khan, M.A.


Book ID
114559455
Publisher
IEEE
Year
2002
Tongue
English
Weight
269 KB
Volume
8
Category
Article
ISSN
1077-260X

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


(In)AlGaN deep ultraviolet light emittin
✍ Kolbe, Tim ;Sembdner, Toni ;Knauer, Arne ;Kueller, Viola ;Rodriguez, Hernan ;Ein πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 318 KB

## Abstract The effect of the quantum well (QW) width on the light output and efficiency of ultraviolet (UV) light emitting diodes (LEDs) has been investigated. The carrier injection in the devices is simulated and compared with electroluminescence (EL) measurements. The light output power depends

InGaN Multiple-Quantum-Well Light Emitti
✍ Zhang, B.J. ;Egawa, T. ;Ishikawa, H. ;Nishikawa, N. ;Jimbo, T. ;Umeno, M. πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 89 KB πŸ‘ 2 views

Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for