Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells
β Scribed by Shatalov, M.; Zhang, J.; Chitnis, A.S.; Adivarahan, V.; Yang, J.; Simin, G.; Khan, M.A.
- Book ID
- 114559455
- Publisher
- IEEE
- Year
- 2002
- Tongue
- English
- Weight
- 269 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1077-260X
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## Abstract The effect of the quantum well (QW) width on the light output and efficiency of ultraviolet (UV) light emitting diodes (LEDs) has been investigated. The carrier injection in the devices is simulated and compared with electroluminescence (EL) measurements. The light output power depends
Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for