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Deep ultraviolet light-emitting diodes

✍ Scribed by Hu, X. ;Deng, J. ;Zhang, J. P. ;Lunev, A. ;Bilenko, Y. ;Katona, T. ;Shur, M. S. ;Gaska, R. ;Shatalov, M. ;Khan, A.

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
194 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We report on the development of AlGaN‐based deep UV light emitting diodes (LEDs) with emission wavelengths from 254 to 340 nm, focusing on the improvement of 280 nm LEDs efficiency. Under optimal device structure the UV LEDs efficiency was found to strongly depend on the AlGaN material quality. Milliwatt‐power level LEDs were demonstrated for the 254–340 nm spectral range, and for 280 nm LEDs powers reaching 2.5 mW was achieved at 20 mA DC. (Β© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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## Abstract The effect of the quantum well (QW) width on the light output and efficiency of ultraviolet (UV) light emitting diodes (LEDs) has been investigated. The carrier injection in the devices is simulated and compared with electroluminescence (EL) measurements. The light output power depends