InGaN Multiple-Quantum-Well Light Emitti
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Zhang, B.J. ;Egawa, T. ;Ishikawa, H. ;Nishikawa, N. ;Jimbo, T. ;Umeno, M.
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Article
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2001
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John Wiley and Sons
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English
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Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for