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Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes on Si(111) and Sapphire

โœ Scribed by Kipshidze, G. ;Kuryatkov, V. ;Borisov, B. ;Nikishin, S. ;Holtz, M. ;Chu, S.N.G. ;Temkin, H.


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
166 KB
Volume
192
Category
Article
ISSN
0031-8965

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InGaN Multiple-Quantum-Well Light Emitti
โœ Zhang, B.J. ;Egawa, T. ;Ishikawa, H. ;Nishikawa, N. ;Jimbo, T. ;Umeno, M. ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 89 KB ๐Ÿ‘ 1 views

Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for