Light Emitting Diodes Based on Self-Assembled InAs Quantum Dots Grown on GaAs (311)A Surfaces Using only Si as a Doping Material

✍ Scribed by M.V. Alves; M.J. Semenzato; E. Marega Jr.; P.P. Gonzalez-Borrero

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 107 KB
• Volume: 232
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200207)232:1<32::aid-pssb32>3.0.co;2-i