✦ LIBER ✦

Deep levels in high resistivity GaN epilayers grown by MOCVD

✍ Scribed by Cebao Fang; Xiaoliang Wang; Junxi Wang; Chao Liu; Cuimei Wang; Guoxin Hu; Jianping Li; Chengji Li

Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 270 KB
Volume: 3
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200564122

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of Isoelectronic In Doping on Dee

Effect of Isoelectronic In Doping on Deep Levels in GaN Grown by MOCVD

✍ H.K. Cho; C.S. Kim; Y.K. Hong; Y.-W. Kim; C.-H. Hong; E.-K. Suh; H.J. Lee 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 91 KB 👁 1 views

The deep levels in InGaAlP epilayers gro

The deep levels in InGaAlP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

✍ T. Izumiya; H. Ishikawa; M. Mashita 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 329 KB

Studies on deep levels in GaAs epilayers

Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition

✍ Jiachang Liang; Jialong Zhao; Ying Gao; Kai Dou; Shihua Huang; Jiaqi Yu; Hongkai 📂 Article 📅 1996 🏛 Springer 🌐 English ⚖ 227 KB

Distribution of deep levels in the GaAs

Distribution of deep levels in the GaAs layers of GaAs/AlxGa1−xAs heterostructures grown by MOCVD

✍ D. Allsopp; A.R. Peaker; E.J. Thrush; G. Wale-Evans 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 525 KB

Temperature dependence of deep-level pho

Temperature dependence of deep-level photoluminescence in Ga0.5In0.5P epilayers grown by metal-organic chemical vapour deposition

✍ Jialong Zhao; Ying Gao; Tiangu Gu; M. Sutton; Jiachang Liang 📂 Article 📅 1993 🏛 Springer 🌐 English ⚖ 227 KB

Deep level transient spectroscopy signat

Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates

✍ E. PŁaczek-Popko; J. Trzmiel; E. Zielony; S. Grzanka; R. Czernecki; T. Suski 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 351 KB

In this study, we present the results of investigation on p-n GaN diodes by means of deep level transient spectroscopy (DLTS) within the temperature range of 77-350 K. Si-doped GaN layers were grown by metal-organic vapor-phase epitaxy technique (MOVPE) on the free-standing GaN substrates. Subsequen