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The deep levels in InGaAlP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

โœ Scribed by T. Izumiya; H. Ishikawa; M. Mashita


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
329 KB
Volume
145
Category
Article
ISSN
0022-0248

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