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Deep level transient spectroscopy of hole traps in Zn-annealed ZnTe

✍ Scribed by D. Verity; F.J. Bryant; C.G. Scott; D. Shaw


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
262 KB
Volume
46
Category
Article
ISSN
0038-1098

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Deep level transient spectroscopy of tra
✍ P. Clauws; J. Van Gheluwe; J. Lauwaert; E. Simoen; J. Vanhellemont; M. Meuris; A πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 190 KB

The n-and p-type germanium wafers have been implanted with Ti, Cr, Fe and Co and the electronic defect levels have been studied by deep level transient spectroscopy (DLTS). Distinct spectra with two to four levels have been observed which are assigned to multipleacceptor states of the substitutional