Observation of electron and hole traps in hydrogenated amorphous silicon by voltage- and laser-excited deep level transient spectroscopy

✍ Scribed by J.D. Cohen; D.V. Lang; J.P. Harbison; J.C. Bean

• Publisher: Elsevier Science
• Year: 1980
• Weight: 745 KB
• Volume: 2
• Category: Article
• ISSN: 0379-6787
• DOI: 10.1016/0379-6787(80)90036-8