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Deep level studies in MBE GaAs grown at low temperature

✍ Scribed by K. Xie; Z. C. Huang; C. R. Wie

Book ID
112819988
Publisher
Springer US
Year
1991
Tongue
English
Weight
614 KB
Volume
20
Category
Article
ISSN
0361-5235

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## Abstract In order to find the origin of crystalline defects occurring in the preparation of InAs/GaAs quantum dots (QDs), their appearance was tracked through three different sample types designed as Schottky diodes. Specimens with a GaAs cap layer on a GaAs buffer layer as well as with an InAs