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Deep levels in MBE grown AlGaAs/GaAs heterostructures

✍ Scribed by A. Cavallini; B. Fraboni; F. Capotondi; L. Sorba; G. Biasiol


Book ID
113797716
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
198 KB
Volume
73-74
Category
Article
ISSN
0167-9317

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A preliminary study of growth interruption effects on the GaAs/AlGaAs layers is reported. Deep level transient spectroscopy (DLTS) is performed on Al Schottky barrier devices fabricated on Si-doped, isotype GaAs/Al 0.78 Ga 0.22 As heterostructures grown by molecular beam epitaxy (MBE), both with (20