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DC and low-frequency noise characteristics of SiGe p-channel FETs designed for 0.13-μm technology

✍ Scribed by Okhonin, S.; Py, M.A.; Georgescu, B.; Fischer, H.; Risch, L.

Book ID: 114537797
Publisher: IEEE
Year: 1999
Tongue: English
Weight: 199 KB
Volume: 46
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.772504

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