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Damage characteristics of low-temperature BSi molecular ion implantation in silicon

✍ Scribed by J.H. Liang; S.C. Wang

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
202 KB
Volume
257
Category
Article
ISSN
0168-583X

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Reactiw" ion etching (RIE) of silicon in a nitrogen trifluoride (Nk~) plasma is studied at temperatures between + 20 and -140 Β°~\ 7he etch rates decrease with decreasing temperature and follow an Arrhenius-type dependence below -70 Β°C Cross-sectional transmission electron microscopy gives" evidence